Back Scattered Electrons (BSEs) are primary beam electrons
that have have undergone one or more elastic (billiard ball-type)
collisions within the sample and eventually have bounced around
enough to re-emerge from the surface they came in. Typically BSEs
will also undergo several inelastic collisions during their
time inside the solid as well, and so will typically have an energy
that is lower than the beam energy upon their escape. The energy
spread of BSEs goes from E0, the beam energy, all the
way down to zero; typically this energy distribution is peaked
somewhere between 0.4E0 and 0.95E0 or so,
with the peak being sharper and more pronounced at higher atomic
number.
The total BSE yield (total fraction of beam electrons that backscatter)
from a randomly oriented polycrystal tends to increase monotonically
with the atomic number, Z. Although there are a few exceptions,
Mn(25)-Fe(26), Co(27)-Ni(28), Sn(50)versus its neighbors, the
general trend is for the BSE yield to increase with increasing
Z, and flattening out at higher Z. A general expression approximating
the BSE yield for a flat polished sample is:
BSE yield = -0.0254 + 0.016Z - 1.86*10-4 Z2
+ 8.3*10-7Z3
This works best for the higher beam energies ( > about 5kV).
Other approximations exist for lower beam energies.
In addition to the BSE dependence on Z, surface orientation
also affects the total BSE yield, as well as the preferred direction
of the BSEs. For a flat sample surface that is normal to the beam,
the BSE distribution is peaked in the normal direction, such that
the highest BSE yield comes straight back up. For surfaces at
small angles away from the normal, this distribution still more
or less holds. At larger tilt angles, the beam and the peak in
the BSE distribution can be thought of as occupying mirror positions
with respect to the sample surface, although this is a very crude
approximation at best.
For crystalline samples, the wave nature of the incident electrons
interacts with the periodic structure of the sample to subtly
affect the scattering probability of the beam electrons dependent
on their path relative to the crystal lattice. This effect
is known as electron channeling. The most notable features of
electron channeling are the typically abrupt changes in BSE yield
(as much as 10% or more) at the various Bragg conditions with
the crystal. |